New results on thermalization of electrons in GaAs

Reinhard M. Hannak; Wolfgang W. Ruehle

doi:10.1117/12.175896

6 May 1994 New results on thermalization of electrons in GaAs

Reinhard M. Hannak, Wolfgang W. Ruehle

Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175896
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

The transition from a nonthermal into a thermal distribution of electrons at low densities (< 10¹⁴ cm^-3) is traced on a picosecond time-scale by the time evolution of a band-to-acceptor transition in GaAs:Be. Two narrow, nonthermal electron distributions are detected during the first picoseconds originating from the heavy- and light-hole valence band, respectively. Measurements with circular polarization of excitation and luminescence confirm this assignment. The variation of their energetic peak-positions with excitation energy allows the experimental determination of the valence band dispersions for very small wave vectors near k equals 0, where only parabolic energy terms contribute to the dispersions. The results are consistent with the commonly used effective hole masses.

Citation Download Citation

Reinhard M. Hannak and Wolfgang W. Ruehle "New results on thermalization of electrons in GaAs", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); https://doi.org/10.1117/12.175896

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