Ultrafast carrier capture in quantum well structures

Paul W. M. Blom; Jos E. M. Haverkort; Jan Claes; Pieter J. van Hall; Joachim H. Wolter

doi:10.1117/12.175906

6 May 1994 Ultrafast carrier capture in quantum well structures

Paul W. M. Blom, Jos E. M. Haverkort, Jan Claes, Pieter J. van Hall, Joachim H. Wolter

Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175906
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

We present an experimental and theoretical study of the carrier capture time into a semiconductor quantum well. The carrier capture time was obtained by measuring both the rise of the quantum well population using time-resolved luminescence measurements and the decay of the barrier population using pump-probe correlation experiments. In the first technique we compare the QW rise times after direct (below the barrier band gap) and indirect (above the barrier band gap) excitation, in order to eliminate the effects of relaxation and exciton formation in the quantum well. We report the first experimental observation of oscillations in the carrier capture time between 3 and 20 ps as a function of quantum well thickness, obtained from both techniques. The observed capture times are for the first time in agreement with theoretical predictions from an ambipolar capture model.

Citation Download Citation

Paul W. M. Blom, Jos E. M. Haverkort, Jan Claes, Pieter J. van Hall, and Joachim H. Wolter "Ultrafast carrier capture in quantum well structures", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); https://doi.org/10.1117/12.175906

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