Total evaluation of W-Ti absorber for x-ray mask

Kenji Marumoto; Hideki Yabe; Sunao Aya; Koji Kise; Yasuji Matsui

doi:10.1117/12.175808

13 May 1994 Total evaluation of W-Ti absorber for x-ray mask

Kenji Marumoto, Hideki Yabe, Sunao Aya, Koji Kise, Yasuji Matsui

Proceedings Volume 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV; (1994) https://doi.org/10.1117/12.175808
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

W-Ti film was comprehensively investigated for its application as an x-ray mask absorber. A stress-free and amorphous W-Ti film was successfully deposited by dc sputtering with a W-Ti (1 wt%) target using a gas mixture of Ar and N₂. To obtain much lower stress, we firstly improve the accuracy of stress measurement up to +/- 1 MPa, and ultra-low stress film was obtained by step-annealing. The stress of the film has been found stable enough to apply to x- ray masks in an air atmosphere and for x-ray exposure. The density, composition, and microstructure of the film were also evaluated by SEM, XD, XPS, and TDS. The film surface was very smooth and the roughness measured by AFM was about 2 nm. The etching properties of the absorber using a Cr mask, ITO stopper and electron cyclotron resonance (ECR) discharge plasmas were also investigated in order to achieve a resolution of below 0.1 micrometers . Highly selective and anisotropic etching has been realized using a mixture of SF₆ and CHF₃, by cooling the stage to about -50 degree(s)C under controlled plasma conditions. Moreover, the microfabrication of a smooth W-Ti absorber has been demonstrated for lines and spaces patterns of 0.06 micrometers and for 1-Gbit-class dynamic random access memory patterns.

Citation Download Citation

Kenji Marumoto, Hideki Yabe, Sunao Aya, Koji Kise, and Yasuji Matsui "Total evaluation of W-Ti absorber for x-ray mask", Proc. SPIE 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, (13 May 1994); https://doi.org/10.1117/12.175808

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