Paper
16 May 1994 Negative resists for i-line lithography utilizing acid-catalyzed intramolecular dehydration reaction
Takumi Ueno, Shou-ichi Uchino, Keiko T. Hattori, Toshihiko Onozuka, Seiichiro Shirai, Noboru Moriuchi, Michiaki Hashimoto, S. Koibuchi
Author Affiliations +
Abstract
Chemical amplification negative resist system composed of a novolak resin, a carbinol and an acid generator is investigated for i-line phase-shift lithography. The reaction in this resist is based on an acid-catalyzed intramolecular dehydration reaction. The dehydration products act as aqueous-base dissolution inhibitors, and carbinol compounds in unexposed areas work as dissolution promoters. The resist composed of a novolak resin, 1,4-bis((alpha) -hydroxyisopropyl) benzene (DIOL-1) and 2- naphthoylmethyltetramethylenesulfonium triflate (PAG-2) gives the best lithographic performance in terms of sensitivity and resolution. Line-and-space patterns of 0.275 micrometers are obtained using an i-line stepper (NA:0.45) in conjunction with a phase shifting mask.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takumi Ueno, Shou-ichi Uchino, Keiko T. Hattori, Toshihiko Onozuka, Seiichiro Shirai, Noboru Moriuchi, Michiaki Hashimoto, and S. Koibuchi "Negative resists for i-line lithography utilizing acid-catalyzed intramolecular dehydration reaction", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175334
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Lithography

Chlorine

Absorption

Infrared spectroscopy

Photomasks

Absorbance

Hydrogen

Back to Top