Photochemical amplified PMMA resists

Vladimir N. Genkin

doi:10.1117/12.175351

16 May 1994 Photochemically amplified PMMA resists

Vladimir N. Genkin

Proceedings Volume 2195, Advances in Resist Technology and Processing XI; (1994) https://doi.org/10.1117/12.175351
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

The chemical amplified resists are a good way of the solution of the X-ray, e-beam and DUV resist sensitivity problem. The difficulties of this way are connected with a high temperature diffusion during the process of the chemical amplification [1] (decrease of the contrast) and with the problem of the stable realization of complex thin resist film compositions. The application of photo chemical reactions produces new opportunities to solve this problem [2-4] combined with the traditional methods of the existing technology.The photo chemical amplification of a latent image improving both the resist sensitivity and the contrast is discussed in this report.

Citation Download Citation

Vladimir N. Genkin "Photochemically amplified PMMA resists", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175351

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