23 June 1995Measurement of temperature dependencies of real and imaginary parts of the complex index of refraction of monocrystalline of silicon in the range of absorption edge
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
Optical constants of monocrystalline silicon are experimentally determined in the range from 293 K to 700 K using laser lines of 1.06 micrometers and 1.15 micrometers . The quantitative description of spectral and temperature dependencies of the absorption coefficient for indirect optical transitions is given as well as the empirical approximation of spectral and temperature dependencies of refractive index.
Alexander N. Magunov
"Measurement of temperature dependencies of real and imaginary parts of the complex index of refraction of monocrystalline of silicon in the range of absorption edge", Proc. SPIE 2208, Refractometry, (23 June 1995); https://doi.org/10.1117/12.213175
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Alexander N. Magunov, "Measurement of temperature dependencies of real and imaginary parts of the complex index of refraction of monocrystalline of silicon in the range of absorption edge," Proc. SPIE 2208, Refractometry, (23 June 1995); https://doi.org/10.1117/12.213175