Research of vme photosensitive detector

Changchun Zhu

doi:10.1117/12.2303178

1 January 1994 Research of vme photosensitive detector

Changchun Zhu

Proceedings Volume 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994; 22504H (1994) https://doi.org/10.1117/12.2303178
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States

Abstract

The negative-affinity condition means that electrons at the bottom of the conduction band have more energy than free electrons just outside the surface. Such a condition has been obtained on several semiconductors, and is usually achieved by cleaning the surface under high vacuum and treating it with cesium, and sometimes oxygen. The structure of dc forward GaAs p-n junction emitter is shown in Figl, whose p-surface is activated to a state of negative electron affinity (NEA). When the junction is forward biased, electrons are injected into the p-region, as shown in Fig2. They diffuse to the surface and can be emitted into the vacuum.E1H23

Citation Download Citation

Changchun Zhu "Research of vme photosensitive detector", Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 22504H (1 January 1994); https://doi.org/10.1117/12.2303178

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