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30 November 2017 HEMTs for millimeter wave applications
Jun-Ichiro Nikaido
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Proceedings Volume 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994; 22508H (2017) https://doi.org/10.1117/12.2303322
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States
Abstract
We will report state-of-the-art HEMTs and these technological advantages for millimeter wave applications. Ultra low noise performance for satellite communications has been achieved by GaAs based HEMTs using advanced epitaxy and process technologies.
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Jun-Ichiro Nikaido "HEMTs for millimeter wave applications", Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 22508H (30 November 2017); https://doi.org/10.1117/12.2303322
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KEYWORDS
Field effect transistors
Extremely high frequency
Epitaxy
Gallium arsenide
Satellite communications
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