Fabrication and performances of pHEMT Ka-band 3-stage amplifiers for phased-array applications

Paul Saunier

doi:10.1117/12.2303325

30 November 2017 Fabrication and performances of pHEMT Ka-band 3-stage amplifiers for phased-array applications

Paul Saunier

Proceedings Volume 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994; 22508K (2017) https://doi.org/10.1117/12.2303325
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States

Abstract

A 100-200-400Ã‚Âµm pHEMT amplifier has been developed for Ka-Band operation. This amplifier has achieved the state-of-the-art efficiency of 40% with 235 mW output power and 20.7 dB gain at 31 GHz. Production of variations of this amplifier in quantity of 100 to 200 has been made possible by the advance of new fabrication techniques such as Reactive Ion Etching (RIE) dry recess with etch-stop layer which insures uniformity across full three-inch wafers. Amplifiers of this type are being used in a prototype phased-array antenna.

Citation Download Citation

Paul Saunier "Fabrication and performances of pHEMT Ka-band 3-stage amplifiers for phased-array applications", Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 22508K (30 November 2017); https://doi.org/10.1117/12.2303325

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