Monolithic InGaAs-on-silicon detector with a CMOS-switched capacitor integrator

Abhay M. Joshi; Frank J. Effenberger; Michael Grieco; Guotong Feng; Wei Zhong; J. Ott

doi:10.1117/12.187447

28 September 1994 Monolithic InGaAs-on-silicon detector with a CMOS-switched capacitor integrator

Abhay M. Joshi, Frank J. Effenberger, Michael Grieco, Guotong Feng, Wei Zhong, J. Ott

Proceedings Volume 2290, Fiber Optic Materials and Components; (1994) https://doi.org/10.1117/12.187447
Event: SPIE's 1994 International Symposium on Optics, Imaging, and Instrumentation, 1994, San Diego, CA, United States

Abstract

We have successfully grown InGaAs detectors on the silicon substrate using the special technique of selective epitaxy. Small diameter (50 micrometers ) selective area depositions of In_0.5Ga_0.5As on silicon have exhibited a lower dislocation density, and hence, better electrical performance. These InGaAs detectors are grown by Molecular Beam Epitaxy (MBE). The final goal is to monolithically integrate InGaAs detectors with a silicon CMOS switched capacitor integrator. We have designed a CMOS switched-capacitor integrator (SCI) to realize a linear current-to-voltage conversion over a wide voltage range (-5 to +5 V) with low noise characteristics. The SCI circuit consists of an operational amplifier with a feedback capacitor and a reset switch. The SCI circuit uses +/- 5 V dual power supply and one -5 to +5 V voltage pulse generator. The circuit was simulated using PSPICE and the chip layout was done with the Mentor Graphics.

Citation Download Citation

Abhay M. Joshi, Frank J. Effenberger, Michael Grieco, Guotong Feng, Wei Zhong, and J. Ott "Monolithic InGaAs-on-silicon detector with a CMOS-switched capacitor integrator", Proc. SPIE 2290, Fiber Optic Materials and Components, (28 September 1994); https://doi.org/10.1117/12.187447

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