Low-drive voltage LiNbO3 electro-optic modulator for 2.5 Gbit/s and beyond B-ISDN application

Jing-Jong Pan; Wen-Herng Su; Jingyu Xu; Xiaofan Cao; Ming Shih

doi:10.1117/12.182127

5 August 1994 Low-drive voltage LiNbO3 electro-optic modulator for 2.5 Gbit/s and beyond B-ISDN application

Jing-Jong Pan, Wen-Herng Su, Jingyu Xu, Xiaofan Cao, Ming Shih

Proceedings Volume 2321, Second International Conference on Optoelectronic Science and Engineering '94; (1994) https://doi.org/10.1117/12.182127
Event: Optoelectronic Science and Engineering '94: International Conference, 1994, Beijing, China

Abstract

We report the demonstration of a very low drive voltage (V_(pi )) equals 1.7 V) LiNbO₃ electro-optic modulator suitable for 2.5 Gbit/s and 5 Gbit/s digital transmission applications. This modulator has the lowest reported voltage and length product of 3.5 V/cm and a 3 dB electrical bandwidth of DC to 2.5 GHz.

Citation Download Citation

Jing-Jong Pan, Wen-Herng Su, Jingyu Xu, Xiaofan Cao, and Ming Shih "Low-drive voltage LiNbO3 electro-optic modulator for 2.5 Gbit/s and beyond B-ISDN application", Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); https://doi.org/10.1117/12.182127

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