Paper
7 December 1994 CD data requirements for proximity effect corrections
Richard C. Henderson, Oberdan W. Otto
Author Affiliations +
Abstract
With i-line steppers and 0.5 micrometers lines the line size error due to the optical proximity effect is shown by simulation to be 35% - 60% of the CD error budget. Correcting for the error with individual feature biasing requires potentially thousands of line size measurements. Measuring only the isolated line or the equal line/gap pattern is insufficient. A minimal test pattern consists of 108 iterations of the dimensions and spacings of a three line pattern. Experimental measurements from this minimal set can be combined with simulation by anchoring and reshaping the more detailed simulation data.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard C. Henderson and Oberdan W. Otto "CD data requirements for proximity effect corrections", Proc. SPIE 2322, 14th Annual BACUS Symposium on Photomask Technology and Management, (7 December 1994); https://doi.org/10.1117/12.195817
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KEYWORDS
Optical proximity correction

Lithium

Photomasks

Photomask technology

Critical dimension metrology

Error analysis

Semiconducting wafers

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