Optical switching of bipolar-mode field effect transistors

Giovanni Breglio; Antonello Cutolo; Paolo Spirito; Luigi Zeni

doi:10.1117/12.198651

4 January 1995 Optical switching of bipolar-mode field effect transistors

Giovanni Breglio, Antonello Cutolo, Paolo Spirito, Luigi Zeni

Proceedings Volume 2343, Optically Activated Switching IV; (1995) https://doi.org/10.1117/12.198651
Event: Photonics for Industrial Applications, 1994, Boston, MA, United States

Abstract

We show the feasibility of an optically controlled silicon Bipolar Mode Field Effect Transistor (BMFET) to switch high electrical powers up to 1 kW by exploiting a 25 mW laser diode. We have compared the performance of the BMFET with that of a commercial high power bipolar junction transistor (BJT). Under the same illumination conditions, the switching power of the BMFET has been always higher than that of the BJT by a factor greater than one order of magnitude.

Citation Download Citation

Giovanni Breglio, Antonello Cutolo, Paolo Spirito, and Luigi Zeni "Optical switching of bipolar-mode field effect transistors", Proc. SPIE 2343, Optically Activated Switching IV, (4 January 1995); https://doi.org/10.1117/12.198651

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