Gas source molecular beam epitaxy (MBE) of ZnMgSSe layers

Shizuo Fujita; Jun Suda; Yoichi Kawakami; Shigeo Fujita

doi:10.1117/12.197261

21 December 1994 Gas source molecular beam epitaxy (MBE) of ZnMgSSe layers

Shizuo Fujita, Jun Suda, Yoichi Kawakami, Shigeo Fujita

Proceedings Volume 2346, II-VI Blue/Green Laser Diodes; (1994) https://doi.org/10.1117/12.197261
Event: Photonics for Industrial Applications, 1994, Boston, MA, United States

Abstract

Gas-source molecular beam epitaxy (GSMBE) was applied for the growth of ZnMgSSe layers and quantum well (QW) structures. The source materials were elemental Zn and Se, as well as gas sources of bis- methylcyclopentadienyl-magnesium ((MeCp)₂Mg) and H₂S. Mg and S compositions were well controlled by the flow rate of (MeCp)₂Mg and H₂S, respectively. ZnSe/ZnMgSSe QWs with abrupt heterointerface have successfully been grown on [100]-oriented GaAs substrates under in-situ monitoring of specular beam intensity oscillation in reflection high energy electron diffraction (RHEED). Photoluminescence (PL) at 4.2 K revealed sharp and intense emission from single QWs, which is attributed to n equals 1 heavy-hole free exciton. The photopumped lasing of a double heterostructure was achieved at room temperature with low threshold excitation intensity (110 kW/cm²), suggesting formation of well-defined heterostructures and promising potential of GSMBE for device applications.

Citation Download Citation

Shizuo Fujita, Jun Suda, Yoichi Kawakami, and Shigeo Fujita "Gas source molecular beam epitaxy (MBE) of ZnMgSSe layers", Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); https://doi.org/10.1117/12.197261

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