A Surface Acoustic Wave (SAW) Charge Transfer Imager

N. A. Papanicolauo; H. C. Lin

doi:10.1117/12.959316

18 February 1981 A Surface Acoustic Wave (SAW) Charge Transfer Imager

N. A. Papanicolauo, H. C. Lin

Proceedings Volume 0244, Mosaic Focal Plane Methodologies I; (1981) https://doi.org/10.1117/12.959316
Event: 24th Annual Technical Symposium, 1980, San Diego, United States

Abstract

Surface acoustic waves excited in a Si-Si0₂-ZnO layered structure can produce a traveling electric field in the silicon substrate. Charges stored in the traveling potential wells can be transferred at high speed and density and with less complexity than conventional coupled devices. The monolithic structure under investigation for the SAW-charge transfer device consists of a silicon substrate, a thin silicon dioxide insulating layer on top of which a ZnO piezoelectric film is deposited by sputtering. The surface acoustic waves are excited by interdigital transducers. The signal charge is injected into traveling potential wells that travel with the velocity of sound. The presence of a thin shorting plate placed on the ZnO film, over the charge transfer region can enhance the acoustoelectric potential at the Si-Si0₂ interface, thus resulting in a more efficient device. An 80 MHz, 2g-second SAW-CCD has successfully been fabricated. An optical application utilizing such a structure is proposed. It can be used in place of a conventional interline transfer design. Surface acoustic waves are launched before the charges are transferred from the sensor region to the transport region.

Citation Download Citation

N. A. Papanicolauo and H. C. Lin "A Surface Acoustic Wave (SAW) Charge Transfer Imager", Proc. SPIE 0244, Mosaic Focal Plane Methodologies I, (18 February 1981); https://doi.org/10.1117/12.959316

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KEYWORDS

Acoustics

Silicon

Wave propagation

Zinc oxide

Imaging systems

Charge-coupled devices

Electrons

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