Application of chemically amplified resists to photomask fabrication

Masumi Arai; Hiroyuki Inomata; Toshiharu Nishimura; Masa-aki Kurihara; Naoya Hayashi

doi:10.1117/12.212765

3 July 1995 Application of chemically amplified resists to photomask fabrication

Masumi Arai, Hiroyuki Inomata, Toshiharu Nishimura, Masa-aki Kurihara, Naoya Hayashi

Proceedings Volume 2512, Photomask and X-Ray Mask Technology II; (1995) https://doi.org/10.1117/12.212765
Event: Photomask Japan 1995, 1995, Kanagawa, Japan

Abstract

Characteristics of four chemically-amplified (CA), negative EB resists have been evaluated and compared with the requirements to resists for 64 Mb-DRAM reticles The four resists satisfy the requirements on sensitivity, side-wall angle, corner roundness, edge roughness, and dry- etch rate. In a wet-etch process three resists (resists B, C and D) have good CD linearity down to 0.5 micrometers whereas one resist (resist A) has a poor linearity owing to a large etching shift. A dry-etch process could extend CD linearity and resolution limits for all the resists. Storage of a resist-coated blank in a box with silica gel is found to be effective in extending the life of the blank after coating. Thus, the lives after coating for all the resists are long enough for practical use (CD deviation less than 0.1 micrometers per month) under the above storage conditions. Only two resists (resists A and D) have lives after exposure long enough for practical use (CD deviation less than 0.1 micrometers per 10h). Reducing the contribution of post-exposure bake to CD uniformity is achieved by the use of a hot-plate that can give good uniformity in the surface temperature of a Cr/Qz-substrate. In conclusion, CA resists can meet the requirements to resists for 64 Mb-DRAM reticles.

Citation Download Citation

Masumi Arai, Hiroyuki Inomata, Toshiharu Nishimura, Masa-aki Kurihara, and Naoya Hayashi "Application of chemically amplified resists to photomask fabrication", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); https://doi.org/10.1117/12.212765

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