Radiation effects of various electro-optic devices

Alvin S. Kanofsky

doi:10.1117/12.230117

15 January 1996 Radiation effects of various electro-optic devices

Alvin S. Kanofsky

Proceedings Volume 2611, Optical Network Engineering and Integrity; (1996) https://doi.org/10.1117/12.230117
Event: Photonics East '95, 1995, Philadelphia, PA, United States

Abstract

We have measured the effects of radiation on various electro-optical devices used as communication components. The measurements were performed with 2.5 MeV electrons from the Lehigh University Van de Graaff. The performance of the devices was monitored both during irradiation and after irradiation. We report here the results of irradiation on various electro-optical devices used for optical communications. These devices include simple waveguide couplers, optical waveguide switching devices, transistors, and total amplifier systems. The 3 MeV High Voltage KN3000 Van de Graaff at Lehigh University was used for the irradiations. The machine provided beams of electrons which could be directly used or gamma rays from the electron beam bremsstrahlung. We looked for slowly changing time effects using a continuous beam as well as transient effects with a pulsed beam arrangement. We now review the results obtained with various electro-optical components.

Citation Download Citation

Alvin S. Kanofsky "Radiation effects of various electro-optic devices", Proc. SPIE 2611, Optical Network Engineering and Integrity, (15 January 1996); https://doi.org/10.1117/12.230117

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KEYWORDS

Waveguides

Switches

Electrons

Field effect transistors

Radiation effects

Electro optics

Polymers

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