Paper
19 September 1995 Patterned eutectic bonding with Al/Ge thin films for MEMS
Paul M. Zavracky, Bao Vu
Author Affiliations +
Proceedings Volume 2639, Micromachining and Microfabrication Process Technology; (1995) https://doi.org/10.1117/12.221299
Event: Micromachining and Microfabrication, 1995, Austin, TX, United States
Abstract
In this paper, we report our results using eutectic bonding with the aluminum/germanium alloy to create high quality bonds. The results of a series of experiments conducted to optimize eutectic alloy bonding for MEMS are described. Issues discussed include surface preparation, eutectic composition, bonding apparatus and bonding conditions (temperature and time).
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul M. Zavracky and Bao Vu "Patterned eutectic bonding with Al/Ge thin films for MEMS", Proc. SPIE 2639, Micromachining and Microfabrication Process Technology, (19 September 1995); https://doi.org/10.1117/12.221299
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CITATIONS
Cited by 15 scholarly publications.
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KEYWORDS
Aluminum

Germanium

Microelectromechanical systems

Semiconducting wafers

Silicon

Wafer bonding

Sensors

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