Laser complex for investigation of semiconductor nonlinear constants

Vitaly V. Grabovski; Ishtvan V. Fekeshgazi; Konstantin V. May; Valentin I. Prokhorenko; Dmytro Y. Yatskiv

doi:10.1117/12.226237

3 November 1995 Laser complex for investigation of semiconductor nonlinear constants

Vitaly V. Grabovski, Ishtvan V. Fekeshgazi, Konstantin V. May, Valentin I. Prokhorenko, Dmytro Y. Yatskiv

Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226237
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine

Abstract

The laser complex for the investigations of nonlinear properties of semiconductors has been designed. The results of the two-photon absorption coefficient of the chalcohenide glass As₂S₃ measurements are presented. The measurements accuracy and threshold sensitivity of the complex are estimated.

Citation Download Citation

Vitaly V. Grabovski, Ishtvan V. Fekeshgazi, Konstantin V. May, Valentin I. Prokhorenko, and Dmytro Y. Yatskiv "Laser complex for investigation of semiconductor nonlinear constants", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226237

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