Luminescence of rare-earth ions in epitaxial fluoride layers

Nikolai S. Sokolov; Nikolai Leopoldovich Yakovlev

doi:10.1117/12.229165

3 January 1996 Luminescence of rare-earth ions in epitaxial fluoride layers

Nikolai S. Sokolov, Nikolai Leopoldovich Yakovlev

Proceedings Volume 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions; (1996) https://doi.org/10.1117/12.229165
Event: Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare Earth and Transitional Ions, 1995, St. Petersburg, Russian Federation

Abstract

Epitaxial fluoride layers (CaF₂, SrF₂ and CdF₂) were grown and doped with rare- earth ions by means of molecular beam epitaxy. This technique allows creation of new fluoride heterostructures (including superlattices) with high level and controlled profile of doping. Photoluminescence spectra of divalent ions (Eu²⁺ and Sm²⁺) were used to study strains and stress relaxation in the films. In the structures grown by MBE one can observe effects which are not actual in bulk crystals. They are crossing of 4f⁶ and 4f⁵5d levels of Sm²⁺ ions in CaF₂ layers with tensile strain as high as 2%, new shape of inhomogeneously broadened Sm²⁺ zero phonon emission line in very thin CaF₂ layers arising from modification of strain fields of defects near the surface, bleaching of photoluminescence of RE ions in thin CaF₂:Sm²⁺ layers on Si(111) and in CdF₂-CaF₂:Eu²⁺ superlattices. Luminescence of trivalent ions (Nd³⁺ and Er³⁺) in CaF₂ films is quenched at much higher concentration of the dopants than in bulk crystals. It makes these films very attractive for potential optoelectronic applications.

Citation Download Citation

Nikolai S. Sokolov and Nikolai Leopoldovich Yakovlev "Luminescence of rare-earth ions in epitaxial fluoride layers", Proc. SPIE 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions, (3 January 1996); https://doi.org/10.1117/12.229165

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