Quasi-vacancy model for impurity centers with partially filled d- and f-shells

N. P. Ilyin; V. F. Masterov

doi:10.1117/12.229149

3 January 1996 Quasi-vacancy model for impurity centers with partially filled d- and f-shells

N. P. Ilyin, V. F. Masterov

Proceedings Volume 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions; (1996) https://doi.org/10.1117/12.229149
Event: Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare Earth and Transitional Ions, 1995, St. Petersburg, Russian Federation

Abstract

It is shown that quasi-vacancy model can be derived using one-electron Green's function method which provides a realistic two-band structure of a semiconductor. This model provides a suitable basis for calculation of the impurity centers which is hard to qualify in terms of purely 'deep' or purely 'shallow' levels, such as impurity centers with partially filled d- and f- shells.

Citation Download Citation

N. P. Ilyin and V. F. Masterov "Quasi-vacancy model for impurity centers with partially filled d- and f-shells", Proc. SPIE 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions, (3 January 1996); https://doi.org/10.1117/12.229149

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