Exciton confinement effect in semiconductor quantum wells studied by resonant second harmonic generation

Hiroyuki Ito; Fujio Minami; Kouji Yoshida; Kuon Inoue; Kenji Watanabe

doi:10.1117/12.237053

26 April 1996 Exciton confinement effect in semiconductor quantum wells studied by resonant second harmonic generation

Hiroyuki Ito, Fujio Minami, Kouji Yoshida, Kuon Inoue, Kenji Watanabe

Author Affiliations +

Proceedings Volume 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials; (1996) https://doi.org/10.1117/12.237053
Event: 3rd International Conference on Intelligent Materials, 1996, Lyon, France

Abstract

We have investigated the electronic structures of GaAs/Al(Ga)As and GaAs/AlAs quantum wells by resonance effects of second-harmonic generation. Second-harmonic generation signals manifest themselves in two-photon resonance with the confined 1S and/or 2P excitons in GaAs/Al(Ga)As and ZnSe/ZnS quantum wells. The assignment of the resonance is directly determined from comparison to the results of one-photon and two-photon absorption data. From the energy splitting of the 1S and 2P exciton levels, the exciton binding energies can be determined. There is a significant increase in the binding energy as compared to that in bulk materials. This increase is caused by the exciton confinement effect.

Citation Download Citation

Hiroyuki Ito, Fujio Minami, Kouji Yoshida, Kuon Inoue, and Kenji Watanabe "Exciton confinement effect in semiconductor quantum wells studied by resonant second harmonic generation", Proc. SPIE 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials, (26 April 1996); https://doi.org/10.1117/12.237053

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