Formation of defects in CdTe doped by Vanadium

Alexander E. Belyaev; L. A. Mischenko; Moisey K. Sheinkman

doi:10.1117/12.239219

29 April 1996 Formation of defects in CdTe doped by Vanadium

Alexander E. Belyaev, L. A. Mischenko, Moisey K. Sheinkman

Proceedings Volume 2795, Nonlinear Optics of Liquid and Photorefractive Crystals; (1996) https://doi.org/10.1117/12.239219
Event: Nonlinear Optics of Liquid and Photorefractive Crystals, 1995, Ai-Danil, Crimea, Ukraine

Abstract

Electrical and optical properties of CdTe doped by Vanadium in the concentration range from 5.10¹⁸cm^-3 to 5.10¹⁹cm^-3 are studied with the use of a set of experimental methods: EPR, photoluminescence, photoconductivity, and thermostimulated conductivity. It is shown that doping CdTe by Vanadium leads to formation of defect that manifests itself as deep donor center with optical and thermal activation energies equal to 1.30 eV and 0.71 eV respectively.

Citation Download Citation

Alexander E. Belyaev, L. A. Mischenko, and Moisey K. Sheinkman "Formation of defects in CdTe doped by Vanadium", Proc. SPIE 2795, Nonlinear Optics of Liquid and Photorefractive Crystals, (29 April 1996); https://doi.org/10.1117/12.239219

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