Pulsed laser deposition of ferroelectric thin films

Somnath Sengupta; Steven H. McKnight; Louise C. Sengupta

doi:10.1117/12.273732

9 May 1997 Pulsed laser deposition of ferroelectric thin films

Somnath Sengupta, Steven H. McKnight, Louise C. Sengupta

Proceedings Volume 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II; (1997) https://doi.org/10.1117/12.273732
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

It has been shown that in bulk ceramic form, the barium to strontium ratio in barium strontium titanium oxide (Ba_{1- x}Sr_xTiO₃, BSTO) affects the voltage tunability and electronic dissipation factor in an inverse fashion; increasing the strontium content reduces the dissipation factor at the expense of lower voltage tunability. However, the oxide composites of BSTO developed at the Army Research Laboratory still maintain low electronic loss factors for all compositions examined. The intent of this study is to determine whether such effects can be observed in the thin film form of the oxide composites. The pulsed laser deposition (PLD) method has been used to deposit the thin films. The different compositions of the compound (with 1 wt% of the oxide additive) chosen were: Ba_0.3Sr_0.7TiO₃, Ba_0.4Sr_0.6TiO₃, Ba_0.5Sr_0.5TiO₃, Ba_0.6Sr_0.4TiO₃, and Ba_0.7Sr_0.3TiO₃. The electronic properties investigated in this study were the dielectric constant and the voltage tunability. The morphology of the thin films were examined using the atomic force microscopy. Fourier transform Raman spectroscopy was also utilized for optical characterization of the thin films. The electronic and optical properties of the thin films and the bulk ceramics were compared. The results of these investigations are discussed.

Citation Download Citation

Somnath Sengupta, Steven H. McKnight, and Louise C. Sengupta "Pulsed laser deposition of ferroelectric thin films", Proc. SPIE 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II, (9 May 1997); https://doi.org/10.1117/12.273732

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