Paper
2 May 1997 Performance of ridge-guide AlGaInAs lasers
Jieh-Ping Sih, T. M. Chou, Jay B. Kirk, Jerome K. Butler, Gary A. Evans, A. R. Mantie, Jack Koscinski, Richard K. DeFreez
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Abstract
AlGaInAs semiconductor lasers operating at a wavelength of 1.3 micrometers show superior performance compared to InGaAsP lasers. Ridge guide lasers are fabricated from both material systems by the same process. The characteristic temperature To for the AlGaInAs lasers (approximately 100 degree(s)K) is about twice that of the InGaAsP lasers (approximately 50 degree(s)K) resulting in substantially lower thresholds (approximately 34 mA compared to approximately 56 mA) at 85 degree(s)C. The 3-dB modulation frequency of AlGaInAs lasers is about 25% higher than that of the InGaAsP lasers.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jieh-Ping Sih, T. M. Chou, Jay B. Kirk, Jerome K. Butler, Gary A. Evans, A. R. Mantie, Jack Koscinski, and Richard K. DeFreez "Performance of ridge-guide AlGaInAs lasers", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); https://doi.org/10.1117/12.273791
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KEYWORDS
Laser damage threshold

Quantum wells

Etching

Modulation

Internal quantum efficiency

Semiconductor lasers

Quantum efficiency

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