40-Gb/s IC and packaging technologies for future lightwave communications

Yuhki Imai; Taiichi Otsuji; Eiichi Sano; Yohtaro Umeda

doi:10.1117/12.271459

10 April 1997 40-Gb/s IC and packaging technologies for future lightwave communications

Yuhki Imai, Taiichi Otsuji, Eiichi Sano, Yohtaro Umeda

Proceedings Volume 3038, High-Speed Semiconductor Lasers for Communication; (1997) https://doi.org/10.1117/12.271459
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

This paper reviews recent advances made at our laboratories in device, circuit-design, and module-design technologies for future very-high-speed lightwave communications. ICs and modules developed using 0.1 micrometer gate-length InAlAs/InGaAs HEMTs demonstrate promising performance suited to 40-Gb/s applications.

Citation Download Citation

Yuhki Imai, Taiichi Otsuji, Eiichi Sano, and Yohtaro Umeda "40-Gb/s IC and packaging technologies for future lightwave communications", Proc. SPIE 3038, High-Speed Semiconductor Lasers for Communication, (10 April 1997); https://doi.org/10.1117/12.271459

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