Properties of light emission from silicon junctions

Herzl Aharoni; Monuko du Plessis; Lukas Willem Snyman

doi:10.1117/12.281338

22 September 1997 Properties of light emission from silicon junctions

Herzl Aharoni, Monuko du Plessis, Lukas Willem Snyman

Proceedings Volume 3110, 10th Meeting on Optical Engineering in Israel; (1997) https://doi.org/10.1117/12.281338
Event: 10th Meeting on Optical Engineering in Israel, 1997, Jerusalem, Israel

Abstract

Some properties of radiation originating from an avalanching silicon light emitting diode (Si-LED) are dealt with. They are derived from various parts of the spectrum of the Si-LED light. The interdependence of the light output intensity (Li), wavelength ((lambda) ) and reverse current (I_R) are determined, as well as the rate of change dLi/d(lambda) and dLi/dI_R as a function of (lambda) and I_R. The result demonstrate that Li and, to a much lesser extent (lambda) , can be controlled by I_R.

Citation Download Citation

Herzl Aharoni, Monuko du Plessis, and Lukas Willem Snyman "Properties of light emission from silicon junctions", Proc. SPIE 3110, 10th Meeting on Optical Engineering in Israel, (22 September 1997); https://doi.org/10.1117/12.281338

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