LPE growth of ultrathin InGaAsP layer

Baoxue Bo; Baoren Zhu; Baoshun Zhang; Xingde Zhang

doi:10.1117/12.300722

20 February 1998 LPE growth of ultrathin InGaAsP layer

Baoxue Bo, Baoren Zhu, Baoshun Zhang, Xingde Zhang

Author Affiliations +

Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300722
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China

Abstract

The LPE growth characteristics of ultra-thin quaternary InGaAsP alloy on GaAs substrate with different sliding speeds and various graphite growth cells has been described. The properties of grown layer are charactered by SEM, photoluminescence spectrum and x-ray diffractometer. Ten to fifty nm InGaAsP layer can be easily obtained and the FWHM of PL spectrum is about 14 mev at 10 K.

Citation Download Citation

Baoxue Bo, Baoren Zhu, Baoshun Zhang, and Xingde Zhang "LPE growth of ultrathin InGaAsP layer", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300722

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