Applications of silicon-germanium-carbon in MOS and bipolar transistors

Sanjay K. Banerjee

doi:10.1117/12.284583

27 August 1997 Applications of silicon-germanium-carbon in MOS and bipolar transistors

Sanjay K. Banerjee

Proceedings Volume 3212, Microelectronic Device Technology; (1997) https://doi.org/10.1117/12.284583
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

This paper will review growth of Si-Ge and Si-Ge-C alloys using various low thermal budget epitaxial schemes such as UHVCVD, RTPCVD and MBE. The growth issues, materials aspects and bandgap and strain engineering in these alloys will be discussed. The prospective of using these alloys in strained-channel Si-Ge MOSFETs and MODFETs in order to enhance CMOS in the giga-scale era will be discussed. We will also describe the use of these films in Si-Ge HBTs for high speed r-f type applications.

Citation Download Citation

Sanjay K. Banerjee "Applications of silicon-germanium-carbon in MOS and bipolar transistors", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); https://doi.org/10.1117/12.284583

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