Comparison of GaN Schottky barrier and p-n junction photodiodes

Michal Janusz Malachowski; Antoni Rogalski

doi:10.1117/12.304483

8 April 1998 Comparison of GaN Schottky barrier and p-n junction photodiodes

Michal Janusz Malachowski, Antoni Rogalski

Proceedings Volume 3287, Photodetectors: Materials and Devices III; (1998) https://doi.org/10.1117/12.304483
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

At present, the main efforts in fabrication of UV photodetectors are directed to GaN Schottky barriers and p-n junction photodiodes. The future development of UV photodetectors will be dominated by complex band gap heterostructures using 3D gap and doping engineering. AlGaN exhibits extreme flexibility, it can be tailored for optimized detection at important regions of UV spectrum, and multicolor devices can be easily constructed. The comparative study of GaN Schottky barriers and p-n junction photodiodes are carried out in more details. Due to the fact that the built-in voltage of a Schottky diode is smaller than that of a p-n junction, the saturation current of a Schottky barrier is considerably higher than that of p-n junction. Special attention has been devoted on analysis of current responsivities of both types of detectors. Owing to relative simplicity in fabrication of Schottky barriers, they can be more promising than p-n junction detectors, especially in the case of low doping ensuring the entire depletion of the n-type layer.

Citation Download Citation

Michal Janusz Malachowski and Antoni Rogalski "Comparison of GaN Schottky barrier and p-n junction photodiodes", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); https://doi.org/10.1117/12.304483

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