Characterization of a positive chemically amplified photoresist for process control

Nickhil H. Jakatdar; Xinhui Niu; Costas J. Spanos; Andrew R. Romano; Joseph J. Bendik; Ronald P. Kovacs; Stephen L. Hill

doi:10.1117/12.308771

8 June 1998 Characterization of a positive chemically amplified photoresist for process control

Nickhil H. Jakatdar, Xinhui Niu, Costas J. Spanos, Andrew R. Romano, Joseph J. Bendik, Ronald P. Kovacs, Stephen L. Hill

Author Affiliations +

Proceedings Volume 3332, Metrology, Inspection, and Process Control for Microlithography XII; (1998) https://doi.org/10.1117/12.308771
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Chemically Amplified Resists (CARs) are much less observable than their i-line counterparts due to the absence of photoresist actinic absorbency. CARs however, exhibit resist thinning during the Post-Exposure Bake process (PEB). A Design of Experiments (DOE) technique was employed around the exposure and the PEB temperature for a commercial DUV photoresist. A Fourier Transform Infrared (FTIR) technique was used to measure the deprotection of the CARs after the PEB step while standard interferometry techniques were used for exposed area thickness loss measurements after the PEB step. Our analysis indicates that exposed area thickness loss is strongly correlated to the deprotection of the photoresist, so that thickness loss can serve as a reliable deprotection indicator and can hence be possibly used as an observable for control of the photolithography sequence.

Citation Download Citation

Nickhil H. Jakatdar, Xinhui Niu, Costas J. Spanos, Andrew R. Romano, Joseph J. Bendik, Ronald P. Kovacs, and Stephen L. Hill "Characterization of a positive chemically amplified photoresist for process control", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); https://doi.org/10.1117/12.308771

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