Defect inspection of zero E-field border on i-line 9% PSM

Jerry Xiaoming Chen; Franklin D. Kalk

doi:10.1117/12.308741

8 June 1998 Defect inspection of zero E-field border on i-line 9% PSM

Jerry Xiaoming Chen, Franklin D. Kalk

Proceedings Volume 3332, Metrology, Inspection, and Process Control for Microlithography XII; (1998) https://doi.org/10.1117/12.308741
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

In the photomask process, Zero E-field borders have been used on attenuated/embedded phase shift masks to provide an opaque area around the die area in the mask industry, but this border has never been able to be inspected on a laser scan inspection tool. This paper reports the first time that the Zero E-field has been inspected at DuPont Photomasks, Reticle Technology Center.

Citation Download Citation

Jerry Xiaoming Chen and Franklin D. Kalk "Defect inspection of zero E-field border on i-line 9% PSM", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); https://doi.org/10.1117/12.308741

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available