Paper
29 June 1998 Narrow-pitch contact array patterning technique for Gb DRAM using multi-phase-shifting mask
Takashi Nakabayashi, Koji Matsuoka, Shigeo Irie, Hiromasa Fujimoto, Takayuki Yamada, Shuichi Mayumi
Author Affiliations +
Abstract
Application of a multi-phase-shifting mask to hole arrays for giga-bit DRAM has been studied. Self-aligned contact plugs for a cell pitch of 0.38 micrometer under the bit-line contacts and the storage-node contacts have been formed at the same time by using a multi-phase-shifting mask with two different phase-shifters. Sufficient depth of focus (DOF) of 0.8 micrometer has been obtained. Furthermore, hole-shape distortion caused by focus offset can be suppressed under the off-axis illumination condition with a quadrupole aperture
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Nakabayashi, Koji Matsuoka, Shigeo Irie, Hiromasa Fujimoto, Takayuki Yamada, and Shuichi Mayumi "Narrow-pitch contact array patterning technique for Gb DRAM using multi-phase-shifting mask", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310770
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KEYWORDS
Distortion

Optical lithography

Phase shifts

Scanning electron microscopy

Etching

Imaging arrays

Photomicroscopy

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