MOCVD growth of AlGaN UV LEDs

Jung Han; Mary Hagerott Crawford

doi:10.1117/12.311042

22 June 1998 MOCVD growth of AlGaN UV LEDs

Jung Han, Mary Hagerott Crawford

Proceedings Volume 3419, Optoelectronic Materials and Devices; 341907 (1998) https://doi.org/10.1117/12.311042
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan

Abstract

Issues related to the MOCVD growth of AlGaN, specifically the gas-phase parasitic reactions among TMG, TMA, and NH₃, are studied using an in-situ optical reflectometer. It is observed that the presence of the well-known gas phase adduct could seriously hinder the incorporation behavior of TMGa. Relatively low reactor pressures are employed to grow an AlGaN/GaN SCH QW p-n diode structure. The UV emission at 360 nm represents the first report of LED operation from an indium-free GaN QW diode.

Citation Download Citation

Jung Han and Mary Hagerott Crawford "MOCVD growth of AlGaN UV LEDs", Proc. SPIE 3419, Optoelectronic Materials and Devices, 341907 (22 June 1998); https://doi.org/10.1117/12.311042

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available