Ga2O3(Gd2O3) as a dielectric insulator for GaAs device applications

Tsong Sheng Lay; Minghwei Hong; J. P. Mannaerts; C. T. Liu; Jueinai Raynien Kwo; Fan Ren; M. A. Marcus; K. K. Ng; Young-Kai Chen; Li-Jen Chou; Kuang-Chien Hsieh; Keh-Yung Y. Cheng

doi:10.1117/12.310993

22 June 1998 Ga₂O₃(Gd₂O₃) as a dielectric insulator for GaAs device applications

Tsong Sheng Lay, Minghwei Hong, J. P. Mannaerts, C. T. Liu, Jueinai Raynien Kwo, Fan Ren, M. A. Marcus, K. K. Ng, Young-Kai Chen, Li-Jen Chou, Kuang-Chien Hsieh, Keh-Yung Y. Cheng

Author Affiliations +

Proceedings Volume 3419, Optoelectronic Materials and Devices; 34190B (1998) https://doi.org/10.1117/12.310993
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan

Abstract

The novel deposition technique of Ga₂O₃(Gd₂O₃) film by using in-situ molecular beam epitaxy (MBE) has led to the first demonstration of enhancement mode GaAs metal oxide semiconductor field effect transistors. For sub- micron GaAs device applications, the current leakage in the gate dielectric of reduced thickness has been an important issue. In this work, we address this aspect for the Ga₂O₃(Gd₂O₃) thin films deposited on n-type GaAs and present the electrical characteristics of the GaAs MOS structures as a function of the gate dielectric thickness, varying from 16.6 nm to 7.7 nm. The as-deposited thin dielectric layers show, in dark an inversion layer formation as well as an excellent insulator performance: a gate leakage current density as low as 10^-9 A/cm² at low gate bias up to 2.5 V and the electrical breakdown field reaches above 10 MV/cm. The high resolution transmission electron microscopy measurements show a sharp and uniform dielectric/GaAs transition with interfacial roughness < 1 nm.

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Tsong Sheng Lay, Minghwei Hong, J. P. Mannaerts, C. T. Liu, Jueinai Raynien Kwo, Fan Ren, M. A. Marcus, K. K. Ng, Young-Kai Chen, Li-Jen Chou, Kuang-Chien Hsieh, and Keh-Yung Y. Cheng "Ga₂O₃(Gd₂O₃) as a dielectric insulator for GaAs device applications", Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190B (22 June 1998); https://doi.org/10.1117/12.310993

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