Antimonide-based interdiffused quantum wells

Steven K. H. Sim; E. Herbert Li; Kabula Mutamba; Hans L. Hartnagel

doi:10.1117/12.311021

22 June 1998 Antimonide-based interdiffused quantum wells

Steven K. H. Sim, E. Herbert Li, Kabula Mutamba, Hans L. Hartnagel

Proceedings Volume 3419, Optoelectronic Materials and Devices; 341910 (1998) https://doi.org/10.1117/12.311021
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan

Abstract

Antimonide (Sb) is said to be an emerging optoelectronic materials for both high speed and long wavelength electronics devices. Recently, there has been much research activities on antimonide based system. Among Group V elements, antimonide is of particular interest as its lattice parameter matches solid solutions of various ternary and quaternary III-V compounds whose band gap cover a wide spectral range from absorption in antimonide based superlattices, detection of longer wavelength of 8 to 14 micrometers is possible. With the technique of interdiffusion applying to an antimonide based quantum well, we will be able to obtain devices which are bias tunable. This technique of interdiffusion is a thermal process which induces an interdiffusion of the constituent atoms across the heterointerfaces of an as-grown quantum well, and results in modification of the composition and confinement profiles of the quantum well structures. Hence, the optical properties of the material can be modified to desire values. In this presentation, an antimonide based interdiffused quantum well structure is carefully examined including experimental results, with strong emphasis on its tunable properties and summarized with focus on its device applications and future development.

Citation Download Citation

Steven K. H. Sim, E. Herbert Li, Kabula Mutamba, and Hans L. Hartnagel "Antimonide-based interdiffused quantum wells", Proc. SPIE 3419, Optoelectronic Materials and Devices, 341910 (22 June 1998); https://doi.org/10.1117/12.311021

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