Ion beam synthesis of beta-FeSi2 as an IR photosensitive material

Yoshihito Maeda; Tomoki Akita; Kenji Umezawa; Kiyoshi Miyake; Masakazu Sagawa

doi:10.1117/12.311028

22 June 1998 Ion beam synthesis of β-FeSi₂ as an IR photosensitive material

Yoshihito Maeda, Tomoki Akita, Kenji Umezawa, Kiyoshi Miyake, Masakazu Sagawa

Proceedings Volume 3419, Optoelectronic Materials and Devices; 341916 (1998) https://doi.org/10.1117/12.311028
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan

Abstract

The large sized and flat polycrystalline (beta) -FeSi₂/n- Si heterojunction can be formed by a triple energy implantation method and the sample annealing at 800 degrees C. The polycrystalline (beta) -FeSi₂ gains show good crystalline characteristics, a photoluminescence peak at 0.81 eV at 4.2 K and the optical direct band-gap of 0.84 eV. The (beta) -FeSi₂/n-Si heterojunction shows good diode characteristics and high photovoltaic sensitivity for IR light. These results support that the ion beam synthesized (beta) -FeSi₂/n-Si heterojunction is a promising IR sensitive materials.

Citation Download Citation

Yoshihito Maeda, Tomoki Akita, Kenji Umezawa, Kiyoshi Miyake, and Masakazu Sagawa "Ion beam synthesis of β-FeSi₂ as an IR photosensitive material", Proc. SPIE 3419, Optoelectronic Materials and Devices, 341916 (22 June 1998); https://doi.org/10.1117/12.311028

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available