Paper
26 October 1998 New design structure of a direct-injection input circuit with adaptive gain control techniques
Yuan Lung Chin, Tai Ping Sun, Wen Yaw Chung, Jung Chuan Chou, Shen Kan Hsiung
Author Affiliations +
Abstract
Based on the application of the direct injection for per detector (DI) input technique, a new readout structure for the infrared (IR) focal-plane-array (FPA), called the variable gain direct inject per detector (VGDI) is proposed and analyzed. The readout circuit of VGDI of a unit cell of photo- voltaic sensor under investigation, is composed of a direct inject per detector circuit, high gain amplifier, and the reset switch. The VGDI readout chip has been designed in 0.5 micrometer double-poly-double-metal (DPDM) n-well CMOS technology in various formats from 8 X 8 to 128 X 128. The simulation 8 X 8 VGDI of the readout chip have successfully verified both the readout function and performance. The high gain, low power, high sensitivity readout performances are achieved in a 50 X 50 micrometer2 pixel size.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuan Lung Chin, Tai Ping Sun, Wen Yaw Chung, Jung Chuan Chou, and Shen Kan Hsiung "New design structure of a direct-injection input circuit with adaptive gain control techniques", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); https://doi.org/10.1117/12.328008
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Cited by 1 scholarly publication.
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KEYWORDS
Sensors

Amplifiers

Staring arrays

Infrared sensors

Lithium

Switches

Infrared radiation

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