Reticle writer for next-generation SEMI mask standard: mask handling and exposure

Christian Ehrlich

doi:10.1117/12.332870

18 December 1998 Reticle writer for next-generation SEMI mask standard: mask handling and exposure

Christian Ehrlich

Proceedings Volume 3546, 18th Annual BACUS Symposium on Photomask Technology and Management; (1998) https://doi.org/10.1117/12.332870
Event: 18th Annual BACUS Symposium on Photomask Technology and Management, 1998, Redwood City, CA, United States

Abstract

The world semiconductor industry is currently preparing itself for the next evolutionary step in the ongoing development of the integrated circuit, characterized by the 0.18 to 0.15 micrometer technology. The already complex engineering task for the mask tool makers is furthermore complicated by the introduction of the new SEMI reticle standard with a 230 mm by 230 mm large and 9 mm thick quartz glass blank that will have a weight of more than one kilogram. The production of these advanced masks is already identified as a key enabling technology which will stretch the capabilities of the manufacturing process, and its equipment, to the limit. The mask making e-beam system Leica ZBA320, capable of exposing a 230 mm reticle and featuring the variable shaped beam approach with a 20 kV accelerating voltage has been introduced recently. Now the first results of e-beam exposures with this new type of mask writer are presented. Enhancements form the previous generation system include improved deflection systems, stage metrology, pattern data handling, and an address grid down to 10 nanometers. This system's specified performance enables it to produce reticles designed to support semiconductor fabrication utilizing 180 nanometer design rules, and beyond, with high accuracy and productivity.

Citation Download Citation

Christian Ehrlich "Reticle writer for next-generation SEMI mask standard: mask handling and exposure", Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); https://doi.org/10.1117/12.332870

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