High-power superluminescent diodes

Yi Qu; Xin Gao; Baoshun Zhang; Li Wang; Xingde Zhang; Guotong Du

doi:10.1117/12.317977

12 August 1998 High-power superluminescent diodes

Yi Qu, Xin Gao, Baoshun Zhang, Li Wang, Xingde Zhang, Guotong Du

Proceedings Volume 3551, Integrated Optoelectronics II; (1998) https://doi.org/10.1117/12.317977
Event: Photonics China '98, 1998, Beijing, China

Abstract

A high power superluminescent diode (SLD) is developed on the basis of the terraced substrate inner laser diodes. The device is made of the characteristic of LPE of crystal on the non- planar substrate. The device's output power before assembled is 7 mW under operating current 150 mA. The wavelength is about 860 nm. The half width of the spectrum is 23 nm. The device is coupled with fiber (NA equals 0.23, D equals 50 micrometer). The coupling efficiency is about 30%. The pigtail fiber maximum output power is 2 mW.

Citation Download Citation

Yi Qu, Xin Gao, Baoshun Zhang, Li Wang, Xingde Zhang, and Guotong Du "High-power superluminescent diodes", Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); https://doi.org/10.1117/12.317977

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