Pulsed laser deposition of Ti:sapphire thin films using high-speed rotating target

Yoshiki Nakata; Hiroshi Uetsuhara; Satoshi Goto; Nilesh J. Vasa; Tatsuo Okada; Mitsuo Maeda

doi:10.1117/12.352721

15 July 1999 Pulsed laser deposition of Ti:sapphire thin films using high-speed rotating target

Yoshiki Nakata, Hiroshi Uetsuhara, Satoshi Goto, Nilesh J. Vasa, Tatsuo Okada, Mitsuo Maeda

Proceedings Volume 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV; (1999) https://doi.org/10.1117/12.352721
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

We describe the deposition of Ti:sapphire thin films by the pulsed-laser deposition (PLD) method for the waveguide laser application, with an emphasis on the reduction of droplets which is inevitably generate during PLD. In order to eliminate the droplets for the film surface, we introduced centrifugal separation of the droplets out of the laser ablation plume using a high-speed rotating target. The behavior of droplets in the ablation plume generated with a high-speed rotating target is presented along with the film properties.

Citation Download Citation

Yoshiki Nakata, Hiroshi Uetsuhara, Satoshi Goto, Nilesh J. Vasa, Tatsuo Okada, and Mitsuo Maeda "Pulsed laser deposition of Ti:sapphire thin films using high-speed rotating target", Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); https://doi.org/10.1117/12.352721

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