Silicon interference filters and Bragg reflectors for active and passive integrated optoelectronic components

Selena Chan; Philippe M. Fauchet

doi:10.1117/12.342784

19 March 1999 Silicon interference filters and Bragg reflectors for active and passive integrated optoelectronic components

Selena Chan, Philippe M. Fauchet

Author Affiliations +

Proceedings Volume 3630, Silicon-based Optoelectronics; (1999) https://doi.org/10.1117/12.342784
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Porous silicon (PSi) multilayer structures are used in Si- based optoelectronic devices which exhibit interesting optical and electrical properties. Integration of these structure can be achieved either passively or actively. Passive elements include high reflectivity mirrors and optical filters with a maximum reflectivity peak approximately 100%. The benefit of adding a multilayer mirror below a luminescent PSi film is to reduce the amount of light absorbed by the silicon substrate and increase the light output. Placing two multilayer mirrors in between a highly luminescent PSi film creates an active microcavity resonator structure in which a significant photoluminescence and electroluminescence line narrowing (FWHM less than or equal to 20 nm) is observed. A detailed study on the passive and active roles of PSi multilayer structures is presented in a device configuration.

Citation Download Citation

Selena Chan and Philippe M. Fauchet "Silicon interference filters and Bragg reflectors for active and passive integrated optoelectronic components", Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); https://doi.org/10.1117/12.342784

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