Mask error factor and critical dimension budgets for sub-half-micron CMOS processes

Graham G. Arthur; Brian Martin

doi:10.1117/12.350880

14 June 1999 Mask error factor and critical dimension budgets for sub-half-micron CMOS processes

Graham G. Arthur, Brian Martin

Proceedings Volume 3677, Metrology, Inspection, and Process Control for Microlithography XIII; (1999) https://doi.org/10.1117/12.350880
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

The effect known as mask error factor is investigated using the optical lithography simulation tool PROLITH/2 with a well-tried and tuned set of simulation parameters. These investigations are extended to include the effect of pitch, linewidth, optical proximity correction, focus, lens aberrations, partial coherence, resist contrast, resist thickness and exposure. Through the use of focus-exposure matrices, process windows and manufacturing critical dimension budgets, the impact on reticle procurement specifications is also examined.

Citation Download Citation

Graham G. Arthur and Brian Martin "Mask error factor and critical dimension budgets for sub-half-micron CMOS processes", Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); https://doi.org/10.1117/12.350880

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