New application of negative DUV resist for topographical metal layer microlithography

Yung-Tin Chen; Ronfu Chu

doi:10.1117/12.354300

26 July 1999 New application of negative DUV resist for topographical metal layer microlithography

Yung-Tin Chen, Ronfu Chu

Proceedings Volume 3679, Optical Microlithography XII; (1999) https://doi.org/10.1117/12.354300
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

The goal of this study is to assess the capability of a negative DUV resist with application to metal layer lithography. The major issues encountered in metal layer lithography are CD non-uniformity resulting from step height variation from memory cell to periphery and resist's bridging in the area of bank to bank connection within the cell of 64M DRAM. We have compared both positive-tone and negative-tone DUV resist with SiON as the bottom anti- reflection coatings. The results indicate that the negative DUV resists shows no resist bridging problem and has better CD uniformity across step height variation region. The CD uniformity across banks of cells has improves by 10 percent in comparison with positive-tone resist. Process windows are enhanced in both exposure latitude and DOF. The etching resistance to metal is also improved by 20 percent.

Citation Download Citation

Yung-Tin Chen and Ronfu Chu "New application of negative DUV resist for topographical metal layer microlithography", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354300

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