FIB voltage-contrast localization and analysis of contact via chains

Peter J. Jacob; Elko Doering

doi:10.1117/12.346925

27 April 1999 FIB voltage-contrast localization and analysis of contact via chains

Peter J. Jacob, Elko Doering

Proceedings Volume 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing; (1999) https://doi.org/10.1117/12.346925
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom

Abstract

Usually, thick passivations avoid access to voltage contrast localization of electrical opens and shorts. In many cases, depassivation is not a suitable method, since it might influence the failure structure by preparation artifacts. FIB allows both to do in-situ voltage contrast imaging, to put certain parts of the circuitry on ground and to depassivation locally. In-situ failure characterization is also performed by FIB-cross-sectioning and imaging, as it is shown in the following few representative examples.

Citation Download Citation

Peter J. Jacob and Elko Doering "FIB voltage-contrast localization and analysis of contact via chains", Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); https://doi.org/10.1117/12.346925

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