InGaN-based LEDs and laser diodes

Shuji Nakamura

doi:10.1117/12.354827

19 July 1999 InGaN-based LEDs and laser diodes

Shuji Nakamura

Proceedings Volume 3749, 18th Congress of the International Commission for Optics; (1999) https://doi.org/10.1117/12.354827
Event: ICO XVIII 18th Congress of the International Commission for Optics, 1999, San Francisco, CA, United States

Abstract

A violet InGaN multi-quantum well/GaN/AlGaN separate- confinement-heterostructure laser diode (LD) was grown on epitaxially laterally overgrown GaN on sapphire. The threshold current density was 2 - 4 kA/cm². The LDs with cleaved mirror facets showed an output power as high as 30 mW under room-temperature continuous-wave (CW) operation. The stable fundamental transverse mode in the near-field patterns was observed at an output power up to 30 mW. The lifetime of the LDs at a constant output power of 5 mW was more than 1,900 hours under CW operation at an ambient temperature of 50 degree(s)C.

Citation Download Citation

Shuji Nakamura "InGaN-based LEDs and laser diodes", Proc. SPIE 3749, 18th Congress of the International Commission for Optics, (19 July 1999); https://doi.org/10.1117/12.354827

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