Radiation detector performance of CdTe single crystals grown by the conventional vertical Bridgman technique

Csaba Szeles; Elgin E. Eissler; Danny J. Reese; Scott E. Cameron

doi:10.1117/12.366626

19 October 1999 Radiation detector performance of CdTe single crystals grown by the conventional vertical Bridgman technique

Csaba Szeles, Elgin E. Eissler, Danny J. Reese, Scott E. Cameron

Author Affiliations +

Proceedings Volume 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics; (1999) https://doi.org/10.1117/12.366626
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

The charge transport properties and radiation detector performance of semi-insulating CdTe single crystal grown by the conventional vertical Bridgman technique in this paper. The measured room-temperature electrical resistivity of the crystals is below the theoretical maximum allowed by the band gap of CdTe indicating incomplete electrical compensation of the material. The crystals show excellent spectroscopic performance in the 15 keV - 662 keV energy range, with reduced low-energy tailing in the photopeaks. The energy resolution of the best detector was 2.7 keV full width half maximum (FWHM) at 59.5 keV, 4.5 keV FWHM at 122 keV, and 20.1 keV FWHM at 662 keV. This improved performance is attributed to the improved hole transport over the typical HPB CdZnTe. The measured mobility-lifetime product of holes, (mu) (tau) _h approximately equals 2.3 X 10^-4 cm²/V, is significantly higher than that typical for HPB CdZnTe crystals. The measured electron (mu) (tau) _e approximately equals 1.6 X 10^-3 cm²/V of these CdTe crystals suggest somewhat poorer electron transport than in a spectroscopic grade HPB material.

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Csaba Szeles, Elgin E. Eissler, Danny J. Reese, and Scott E. Cameron "Radiation detector performance of CdTe single crystals grown by the conventional vertical Bridgman technique", Proc. SPIE 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, (19 October 1999); https://doi.org/10.1117/12.366626

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