Paper
11 August 1999 Ultrathin integrated ion metal plasma titanium and metallorganic titanium nitride liners for sub 0.18 μm W based metallization schemes for >500 MHz microprocessors
Nitin Khurana, Vikram Pavate, Michael Jackson, T. Mandrekar, Z. Fang, Anish Tolia, H. Luo, Jason Li, Rod Mosely, Murali K. Narasimhan, Mei Chang, Fusen E. Chen
Author Affiliations +
Abstract
This study will specifically address the results of integrating IMP Ti and MOCVD TiN on a high vacuum system. Results of design of experiments used for process characterization and optimizing device parametric such as contact and via resistance will be discussed, in particular with respect to unlanded via schemes. Finally, Cost of Ownership calculations will be presented in comparison to conventional PVD technologies. In summary, the integration of IMP Ti and MOCVD TiN enables the deposition of a highly cost effective, low resistivity, ultra-thin, and low- temperature liners for sub 0.18 micrometers technology node thereby enabling > 500 MHz microprocessor technology.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nitin Khurana, Vikram Pavate, Michael Jackson, T. Mandrekar, Z. Fang, Anish Tolia, H. Luo, Jason Li, Rod Mosely, Murali K. Narasimhan, Mei Chang, and Fusen E. Chen "Ultrathin integrated ion metal plasma titanium and metallorganic titanium nitride liners for sub 0.18 μm W based metallization schemes for >500 MHz microprocessors", Proc. SPIE 3883, Multilevel Interconnect Technology III, (11 August 1999); https://doi.org/10.1117/12.360579
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Cited by 2 scholarly publications.
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KEYWORDS
Tin

Titanium

Chemical vapor deposition

Semiconducting wafers

Metalorganic chemical vapor deposition

Plasma

Metals

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