Paper
4 November 1999 Laser-induced conductivity in aluminum nitride
HongYu Zheng, Harvey M. Phillips, Joo Lett Tan, Gnian Cher Lim
Author Affiliations +
Proceedings Volume 3898, Photonic Systems and Applications in Defense and Manufacturing; (1999) https://doi.org/10.1117/12.368489
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
Abstract
The electrical resistance of AlN, an insulator with a typical electrical resistance greater than 1013 (Omega) - cm, was significantly reduce dafter irradiation from UV lasers. A typical value of a few hundreds (Omega) -cm was consistently achieved. The possible changes in the surface microstructure were investigated using a number of techniques, which included analysis of surface roughness, Raman spectroscopy and XPS. A thin aluminium layer is believed to have formed on the top surface that accounted for the shining metallic appearance after laser irradiation. The relationship between various laser parameters and the electrical conductivity were investigated. The etch rates of AlN with respective to laser power density are presented. The potential industrial application of this technology is discussed.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
HongYu Zheng, Harvey M. Phillips, Joo Lett Tan, and Gnian Cher Lim "Laser-induced conductivity in aluminum nitride", Proc. SPIE 3898, Photonic Systems and Applications in Defense and Manufacturing, (4 November 1999); https://doi.org/10.1117/12.368489
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Cited by 3 scholarly publications.
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KEYWORDS
Aluminum

Resistance

Aluminum nitride

Excimer lasers

Etching

Nd:YAG lasers

Raman spectroscopy

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