Transient spectrum relaxation in Q-switched laser diode with intrinsic absorber

Sergey N. Vainshtein; Juha Tapio Kostamovaara

doi:10.1117/12.381459

28 March 2000 Transient spectrum relaxation in Q-switched laser diode with intrinsic absorber

Sergey N. Vainshtein, Juha Tapio Kostamovaara

Proceedings Volume 3940, Ultrafast Phenomena in Semiconductors IV; (2000) https://doi.org/10.1117/12.381459
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

23 ps/200 W clear single optical pulses were achieved from a Q-switched commercial single heterostructure laser with a standard peak power of 5 W by means of spectral filtering of the transient mode together with optimal pumping conditions. These conditions were found by analysis of the transient spectrum dynamics. A high-power picosecond range optical pulse appears near the trailing range of the pumping current pulse under certain conditions. Its intensity is found to be determined mainly by the transient spectrum width, which in turn depends on the lattice temperature. An increase in the temperature causes both an optical pulse delay with respect to the trailing edge of the current pulse and significant spectrum narrowing. This behavior is ascribed to the effect of saturable absorption and carrier recombination in the heavily doped and compensated active region of the laser diode. A recently suggested model used to interpret the experimental data explains Q-switching behavior by considering tail-state absorption together with carrier heating and cooling in the active region. The difference between the Q-switching mode observed here and the traditional one caused by diffraction losses in the cavity is discussed.

Citation Download Citation

Sergey N. Vainshtein and Juha Tapio Kostamovaara "Transient spectrum relaxation in Q-switched laser diode with intrinsic absorber", Proc. SPIE 3940, Ultrafast Phenomena in Semiconductors IV, (28 March 2000); https://doi.org/10.1117/12.381459

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